GaN on Diamond
Specifications
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GaN thickness: 0.5 µm – 5 µm
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Substrate: SCD (100) or (111), polished
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Interface: Buffer layer (e.g., AlN or AlGaN)
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Crystalline quality: Low dislocation density
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Thermal resistance: Ultra-low (< 0.1 K/W)
Applications
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GaN HEMTs with high power density
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RF and 5G devices
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Next-gen radar and communication systems
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Thermal management-critical devices
Industries
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Wireless Communications
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Military Radar
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5G Infrastructure
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High-Power Electronics
DIAMOND SEMICON