GaN Bonded on PCD Wafer (4-inch)

Specifications

  • PCD wafer: 2-4 inch, 300–500 µm thick
  • GaN layer: Transferred or bonded
  • Bonding method: Plasma-assisted
  • Interface thermal resistance: Minimized for high-power use
GaN Bonded on PCD Wafer (4-inch)

Applications

  • GaN-on-Diamond HEMTs
  • Pulsed RF Power Amplifiers
  • GaN LEDs with enhanced heat dissipation
  • Monolithic microwave integrated circuits (MMICs)

Industries

  • RF & Microwave
  • Space-grade Electronics
  • High-Speed Switching Systems
  • Defence Electronics

© 2025 Diamond Semicon, India. All rights reserved.